![](/img/cover-not-exists.png)
Electrical and reliability characterization of metal-gate/HfO2/Ge FET’s with Si passivation
B. Kaczer, B. De Jaeger, G. Nicholas, K. Martens, R. Degraeve, M. Houssa, G. Pourtois, F. Leys, M. Meuris, G. GroesenekenVolume:
84
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2007.04.100
File:
PDF, 779 KB
english, 2007