Influence of different carbon doping on the performance and...

Microelectronics Reliability 2014 / 09 Vol. 54; Iss. 9-10

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs

Rossetto, I., Rampazzo, F., Meneghini, M., Silvestri, M., Dua, C., Gamarra, P., Aubry, R., di Forte-Poisson, M.-A., Patard, O., Delage, S.L., Meneghesso, G., Zanoni, E.
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Volume:
54
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2014.07.092
Date:
September, 2014
File:
PDF, 921 KB
english, 2014
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