Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20...

Microelectronic Engineering 2008 Vol. 85; Iss. 7

Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma

Alexander Efremov, Nam-Ki Min, Sungihl Kim, Mansu Kim, Sahn Nahm, Kwang-Ho Kwon
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Volume:
85
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.mee.2008.03.003
File:
PDF, 217 KB
english, 2008
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