[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - A general partition scheme for gate leakage current suitable for MOSFET compact models
Wei-Kai Shih,, Rios, R., Packan, P., Mistry, K., Abbott, T.Year:
2001
Language:
english
DOI:
10.1109/iedm.2001.979487
File:
PDF, 349 KB
english, 2001