Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment
Santini, T., Morand, S., Fouladirad, M., Phung, L.V., Miller, F., Foucher, B., Grall, A., Allard, B.Volume:
54
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2014.07.082
Date:
September, 2014
File:
PDF, 1.30 MB
english, 2014