Memory characteristics of MOSFET with silicon nanoclusters...

Microelectronic Engineering 2008 Vol. 85; Iss. 12

Memory characteristics of MOSFET with silicon nanoclusters formed using a pulse-type gas-feeding technique in the LPCVD system

Eunkyeom Kim, Kyoungmin Kim, Daeho Son, Jeongho Kim, Sunghwan Won, Wan-Shick Hong, Junghyun Sok, Kyoungwan Park
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
85
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2008.09.041
File:
PDF, 428 KB
english, 2008
Conversion to is in progress
Conversion to is failed