High electron mobility transistors based on the AlN/GaN...

Microelectronic Engineering 2009 Vol. 86; Iss. 4-6

High electron mobility transistors based on the AlN/GaN heterojunction

A. Adikimenakis, K.E. Aretouli, E. Iliopoulos, A. Kostopoulos, K. Tsagaraki, G. Konstantinidis, A. Georgakilas
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Volume:
86
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.mee.2009.02.004
File:
PDF, 314 KB
english, 2009
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