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Effect of rapid thermal annealing on deep level defects in the Si-doped GaN
V. Rajagopal Reddy, M. Sivapratap Reddy, P. Koteswara RaoVolume:
87
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2009.06.005
File:
PDF, 377 KB
english, 2010