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[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Correlation between surface morphology and breakdown characteristics of thermally grown SiO2 dielectrics in 4H-SiC MOS devices
Uenishi, Yusuke, Kozono, Kohei, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, HeijiYear:
2011
Language:
english
DOI:
10.1109/imfedk.2011.5944852
File:
PDF, 1.13 MB
english, 2011