C–V characterization of SF6 plasma treated AlGaN/GaN...

Microelectronic Engineering 2010 Vol. 87; Iss. 11

C–V characterization of SF6 plasma treated AlGaN/GaN heterostructures

J. Osvald, T. Lalinský, G. Vanko, Š. Haščík, A. Vincze
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Volume:
87
Year:
2010
Language:
english
Pages:
3
DOI:
10.1016/j.mee.2010.02.004
File:
PDF, 370 KB
english, 2010
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