Detailed analysis of charge pumping and IdVg hysteresis for...

Detailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2/HfSiO(N)

S. Sahhaf, R. Degraeve, M. Cho, K. De Brabanter, Ph.J. Roussel, M.B. Zahid, G. Groeseneken
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Volume:
87
Year:
2010
Language:
english
Pages:
6
DOI:
10.1016/j.mee.2010.07.029
File:
PDF, 867 KB
english, 2010
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