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Electrical behavior of amorphous indium–gallium–zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer
Yang, Heewang, Cho, Byungsu, Park, Joohyun, Shin, Seokyoon, Ham, Giyul, Seo, Hyungtak, Jeon, HyeongtagVolume:
14
Language:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2014.09.027
Date:
December, 2014
File:
PDF, 1.14 MB
english, 2014