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Failure signatures on 0.25μm GaN HEMTs for high-power RF applications
Stocco, A., Dalcanale, S., Rampazzo, F., Meneghini, M., Meneghesso, G., Grünenpütt, J., Lambert, B., Blanck, H., Zanoni, E.Volume:
54
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2014.07.075
Date:
September, 2014
File:
PDF, 498 KB
english, 2014