Scanning spreading resistance microscopy for failure...

Microelectronics Reliability 2014 / 09 Vol. 54; Iss. 9-10

Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage

Doering, S., Rudolf, R., Pinkert, M., Roetz, H., Wagner, C., Eckl, S., Strasser, M., Wachowiak, A., Mikolajick, T.
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Volume:
54
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2014.07.021
Date:
September, 2014
File:
PDF, 1.25 MB
english, 2014
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