1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
M. El Kazzi, D.J. Webb, L. Czornomaz, C. Rossel, C. Gerl, M. Richter, M. Sousa, D. Caimi, H. Siegwart, J. Fompeyrine, C. MarchioriVolume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2011.03.151
File:
PDF, 645 KB
english, 2011