An assessment of single-electron effects in multiple-gate...

IEEE Electron Device Letters 2006 / 03 Vol. 27; Iss. 3

An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature

Wei Lee,, Pin Su,, Hou-Yu Chen,, Chang-Yun Chang,, Ke-Wei Su,, Liu, S., Fu-Liang Yang,
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Volume:
27
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2006.870240
Date:
March, 2006
File:
PDF, 208 KB
english, 2006
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