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Simulation and comparison of MOS inversion layer quantum mechanics effects in SiGe PMOSFET and Si PMOSFET
Yang Rong, Luo Jinsheng, Tu Jing, Zhang RuizhiVolume:
35
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.mejo.2003.10.002
File:
PDF, 168 KB
english, 2004