Improved performances of 1.3 μm InGaAs QD...

Microelectronics Journal 2005 Vol. 36; Iss. 3-6

Improved performances of 1.3 μm InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition

V. Tasco, B. Potì, M. De Vittorio, M. De Giorgi, R. Cingolani, A. Passaseo
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Volume:
36
Year:
2005
Language:
english
Pages:
3
DOI:
10.1016/j.mejo.2005.02.102
File:
PDF, 102 KB
english, 2005
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