The influence of 1 nm AlN interlayer on properties...

Microelectronics Journal 2008 Vol. 39; Iss. 5

The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

Lunchun Guo, Xiaoliang Wang, Cuimei Wang, Hongling Xiao, Junxue Ran, Weijun Luo, Xiaoyan Wang, Baozhu Wang, Cebao Fang, Guoxin Hu
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Volume:
39
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.mejo.2007.12.005
File:
PDF, 152 KB
english, 2008
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