Growth and fabrication of AlGaN/GaN HEMT based on...

Microelectronics Journal 2008 Vol. 39; Iss. 9

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

Weijun Luo, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Junxue Ran, Lunchun Guo, Jianping Li, Hongxin Liu, Yanling Chen, Fuhua Yang, Jinmin Li
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Volume:
39
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.mejo.2008.01.083
File:
PDF, 262 KB
english, 2008
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