[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC
Meneghesso, G., Pierobon, R., Rampazzo, F., Tamiazzo, G., Zanoni, E., Bernat, J., Kordos, P., Basile, A.F., Chim, A., Verzellesi, G.Year:
2005
Language:
english
DOI:
10.1109/relphy.2005.1493122
File:
PDF, 1.42 MB
english, 2005