[IEEE Symposium on VLSI Technology - Kyoto, Japan (1997.06.12-1997.06.12)] Symposium on VLSI Technology - A 0.18/spl mu/m CMOS Process Using Nitrogen Profile-engineered Gate Dielectrics
Grider,, Hattangady,, Kraft,, Nicollian,, Kuehne,, Brown,, Aur,, Eklund,, Pas,, Hunter,, Douglas,Year:
1997
Language:
english
DOI:
10.1109/vlsit.1997.623688
File:
PDF, 193 KB
english, 1997