[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Reliability improvement in planar MONOS cell for 20nm-node multi-level NAND Flash memory and beyond
Sakamoto, Wataru, Yaegashi, Toshitake, Okamura, Takayuki, Toba, Takayuki, Komiya, Ken, Sakuma, Kiwamu, Matsunaga, Yasuhiko, Ishibashi, Yutaka, Nagashima, Hidenobu, Sugi, Motoki, Kawada, Nobuhito, UmemYear:
2009
Language:
english
DOI:
10.1109/iedm.2009.5424211
File:
PDF, 335 KB
english, 2009