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[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Effects of cap layer and grain structure on electromigration reliability of Cu/low-k interconnects for 45 nm technology node
Zhang, L., Zhou, J. P., Im, J., Ho, P. S., Aubel, O., Hennesthal, C., Zschech, E.Year:
2010
Language:
english
DOI:
10.1109/irps.2010.5488766
File:
PDF, 1.63 MB
english, 2010