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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology
Jing Zhuge,, Wang, Runsheng, Ru Huang,, Jibin Zou,, Xin Huang,, Kim, D.-W., Park, Donggun, Xing Zhang,, Yangyuan Wang,Year:
2009
Language:
english
DOI:
10.1109/iedm.2009.5424421
File:
PDF, 1.26 MB
english, 2009