[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - 20V-40V Symmetrical Vertical Trench nMOS (SVT MOS) design for display driver ICs
Annese, M., Montanini, P., Toia, F., Zullino, L., Contiero, C.Year:
2006
Language:
english
DOI:
10.1109/ispsd.2006.1666069
File:
PDF, 4.36 MB
english, 2006