[IEEE 2000 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China (24 June 2000)] Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) - Optimization of short channel effect by arsenic P-Halo implant through polysilicon gate for 0.12 um P-MOSFET
Chen, C., Chang, C.Y., Chou, J.W., Huang, C.T., Lin, K.C., Yao-Chin Cheng,, Chih-Yung Lin,Year:
2000
Language:
english
DOI:
10.1109/hkedm.2000.904212
File:
PDF, 387 KB
english, 2000