An analytical threshold voltage model of NMOSFETs with...

Microelectronics Reliability 2005 Vol. 45; Iss. 7-8

An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect

C.S. Ho, Kuo-Yin Huang, Ming Tang, Juin J. Liou
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Volume:
45
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.microrel.2004.10.007
File:
PDF, 241 KB
english, 2005
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