Electrical reliability aspects of HfO2 high-k gate...

Microelectronics Reliability 2006 Vol. 46; Iss. 1

Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress

S. Chatterjee, Y. Kuo, J. Lu, J.-Y. Tewg, P. Majhi
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Volume:
46
Year:
2006
Language:
english
Pages:
8
DOI:
10.1016/j.microrel.2005.02.004
File:
PDF, 244 KB
english, 2006
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