Trench insulated gate bipolar transistors submitted to high...

Microelectronics Reliability 2005 Vol. 45; Iss. 9-11

Trench insulated gate bipolar transistors submitted to high temperature bias stress

C.O. Maïga, H. Toutah, B. Tala-Ighil, B. Boudart
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Volume:
45
Year:
2005
Pages:
4
DOI:
10.1016/j.microrel.2005.07.098
File:
PDF, 282 KB
2005
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