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A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET
R. Zelsacher, A.C.G. Wood, E. Bacher, E. Prax, K. Sorschag, J. Krumrey, J. BaumgartlVolume:
47
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.microrel.2007.07.001
File:
PDF, 198 KB
english, 2007