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A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories
D. Pic, D. Goguenheim, J.-L. OgierVolume:
47
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.microrel.2007.07.040
File:
PDF, 569 KB
english, 2007