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Assessment of temperature and voltage accelerating factors for 2.3–3.2 nm SiO2 thin oxides stressed to hard breakdown
D. Pic, D. Goguenheim, J.L. OgierVolume:
48
Year:
2008
Language:
english
Pages:
7
DOI:
10.1016/j.microrel.2007.08.006
File:
PDF, 310 KB
english, 2008