Trapped charge and stress induced leakage current (SILC) in...

Microelectronics Reliability 2009 Vol. 49; Iss. 9-11

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Ghidini, A. Sebastiani
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Volume:
49
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.microrel.2009.06.016
File:
PDF, 443 KB
english, 2009
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