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[IEEE 2010 International Conference on Advanced Optoelectronics and Lasers (CAOL) - Sevastopol, Ukraine (2010.09.10-2010.09.14)] 2010 International Conference on Advanced Optoelectronics and Lasers - Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties
Pavlovskii, V. N., Lutsenko, E. V., Danilchyk, A. V., Zubialevich, V. Z., Muravitskaya, A. V., Yablonskii, G. P., Kalisch, H., Jansen, R. H., Schineller, B., Heuken, M.Year:
2010
Language:
english
DOI:
10.1109/caol.2010.5634186
File:
PDF, 597 KB
english, 2010