Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs
Ray-Ming Lin, Yung-Hsiang Lin, Chung-Hao Chiang, Mu-Jen Lai, Yi-Lun Chou, Yuan-Chieh Lu, Shou-Yi Kuo, Bor-Ren Fang, Meng-Chyi WuVolume:
50
Year:
2010
Language:
english
Pages:
4
DOI:
10.1016/j.microrel.2010.01.017
File:
PDF, 700 KB
english, 2010