Investigation on NMOS-based power-rail ESD clamp circuits...

Microelectronics Reliability 2010 Vol. 50; Iss. 6

Investigation on NMOS-based power-rail ESD clamp circuits with gate-driven mechanism in a 0.13-μm CMOS technology

Shih-Hung Chen, Ming-Dou Ker
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Volume:
50
Year:
2010
Language:
english
Pages:
10
DOI:
10.1016/j.microrel.2010.01.030
File:
PDF, 1.73 MB
english, 2010
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