Flexible metal–insulator–metal capacitor using plasma...

Microelectronics Reliability 2010 Vol. 50; Iss. 5

Flexible metal–insulator–metal capacitor using plasma enhanced binary hafnium–zirconium–oxide as gate dielectric layer

Jagan Singh Meena, Min-Ching Chu, Jitendra N. Tiwari, Hsin-Chiang You, Chung-Hsin Wu, Fu-Hsiang Ko
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Volume:
50
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.microrel.2010.01.046
File:
PDF, 1.31 MB
english, 2010
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