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Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics
K. Kakushima, K. Tachi, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. IwaiVolume:
50
Year:
2010
Language:
english
Pages:
4
DOI:
10.1016/j.microrel.2010.02.001
File:
PDF, 567 KB
english, 2010