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n-Al0.15Ga0.85 N/p-6H–SiC heterostructure and based bipolar transistor
Ya.I. Alivov, Q. Fan, X. Ni, S. Chevtchenko, I.B. Bhat, H. MorkoçVolume:
50
Year:
2010
Language:
english
Pages:
3
DOI:
10.1016/j.microrel.2010.06.016
File:
PDF, 277 KB
english, 2010