Comparative study of AlGaN/GaN HEMTs robustness versus...

Microelectronics Reliability 2011 Vol. 51; Iss. 2

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

P. Ivo, A. Glowacki, E. Bahat-Treidel, R. Lossy, J. Würfl, C. Boit, G. Tränkle
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Volume:
51
Year:
2011
Language:
english
Pages:
7
DOI:
10.1016/j.microrel.2010.09.029
File:
PDF, 1.45 MB
english, 2011
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