![](/img/cover-not-exists.png)
[IEEE 13th IEEE International Semiconductor Laser Conference - Kagazwa, Japan (Sept. 21-25, 1992)] 13th IEEE International Semiconductor Laser Conference - Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm
Valster, A., van der Poel, C.J., Finke, M.N., Boermans, M.J.B.Year:
1992
Language:
english
DOI:
10.1109/islc.1992.763615
File:
PDF, 136 KB
english, 1992