![](/img/cover-not-exists.png)
[IEEE 2012 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2012.06.10-2012.06.11)] 2012 IEEE Silicon Nanoelectronics Workshop (SNW) - High performance Ω-gate Ge FinFET featuring low temperature Si2H6 passivation and implantless Schottky-barrier NiGe metallic Source/Drain
Liu, Bin, Gong, Xiao, Han, Genquan, Lim, Phyllis Shi Ya, Tong, Yi, Zhou, Qian, Yang, Yue, Daval, Nicolas, Pulido, Matthieu, Delprat, Daniel, Nguyen, Bich-Yen, Yeo, Yee-ChiaYear:
2012
Language:
english
DOI:
10.1109/snw.2012.6243323
File:
PDF, 637 KB
english, 2012