Improved reliability of NO-nitrided SiO2 grown on p-type...

IEEE Electron Device Letters 1998 / 08 Vol. 19; Iss. 8

Improved reliability of NO-nitrided SiO2 grown on p-type 4H-SiC

Hui-Feng Li,, Dimitrijev, S., Harrison, H.B.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
19
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.704399
Date:
August, 1998
File:
PDF, 50 KB
english, 1998
Conversion to is in progress
Conversion to is failed