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Improved reliability of NO-nitrided SiO2 grown on p-type 4H-SiC
Hui-Feng Li,, Dimitrijev, S., Harrison, H.B.Volume:
19
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.704399
Date:
August, 1998
File:
PDF, 50 KB
english, 1998