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[IRE 1987 International Electron Devices Meeting - ()] 1987 International Electron Devices Meeting - Experimental technology and characterization of self-aligned 0.1µm-gate-length low-temperature operation NMOS devices

Sai-Halasz, G.A., Wordeman, M.R., Kern, D.P., Ganin, E., Rishton, S., Ng, H.Y., Zicherman, D.S., Moy, D., Chang, T.H.P., Dennard, R.H.
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Year:
1987
Language:
english
DOI:
10.1109/iedm.1987.191441
File:
PDF, 477 KB
english, 1987
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