Plasma etching of Si and SiO2—The effect of oxygen...

Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas

Mogab, C. J., Adams, A. C., Flamm, D. L.
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Volume:
49
Year:
1978
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.325382
File:
PDF, 846 KB
english, 1978
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