High-performance InGaP/InxGa/sub 1-x/As HEMT with an...

IEEE Electron Device Letters 1999 / 11 Vol. 20; Iss. 11

High-performance InGaP/InxGa/sub 1-x/As HEMT with an inverted delta-doped V-shaped channel structure

Wen-Chan Liu,, Wen-Lung Chang,, Wen-Shiung Lour,, Hsi-Jen Pan,, Wei-Chou Wang,, Jing-Yuh Chen,, Kuo-Hui Yu,, Shun-Ching Feng,
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Volume:
20
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.798039
Date:
November, 1999
File:
PDF, 66 KB
english, 1999
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