Anisotropy of single-crystal 3C–SiC during nanometric...

Modelling and Simulation in Materials Science and Engineering 2013 / 09 Vol. 21; Iss. 6

Anisotropy of single-crystal 3C–SiC during nanometric cutting

Goel, Saurav, Stukowski, Alexander, Luo, Xichun, Agrawal, Anupam, Reuben, Robert L
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Volume:
21
Language:
english
Journal:
Modelling and Simulation in Materials Science and Engineering
DOI:
10.1088/0965-0393/21/6/065004
Date:
September, 2013
File:
PDF, 3.92 MB
english, 2013
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