New III-V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy
Feng, Gan, Yoshimoto, Masahiro, Oe, Kunishige, Chayahara, Akiyoshi, Horino, YujiVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.L1161
Date:
September, 2005
File:
PDF, 190 KB
english, 2005