Comparison Between Epi-Down and Epi-Up Bonded High-Power...

IEEE Transactions on Advanced Packaging 2004 / 11 Vol. 27; Iss. 4

Comparison Between Epi-Down and Epi-Up Bonded High-Power Single-Mode 980-nm Semiconductor Lasers

Liu, X., Hu, M.H., Nguyen, H.K., Caneau, C.G., Rasmussen, M.H., Davis, R.W., Zah, C.-E.
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Volume:
27
Language:
english
Journal:
IEEE Transactions on Advanced Packaging
DOI:
10.1109/tadvp.2004.831862
Date:
November, 2004
File:
PDF, 1.05 MB
english, 2004
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